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    RISS 인기검색어

      Titanium-Based Ohmic Contact on p-Type 4H-SiC

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      https://www.riss.kr/link?id=E805334

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      Material and electrical properties of titanium-based ohmic contacts on p-type 4H-SiC were investigated depending on the post-annealing and the metal covering conditions. Best results are obtained as 4×l0^(-4) ohm.㎠ for Co/Si/Ti metal structures after a vacuum annealing at 850℃ for 60 sec. The contact resistance was measured by a transmission line technique, and the contact resistances were improved more than one order compared to Ti and Co/Ti contacts for the annealed samples at the same conditions. The Co layer is supposed to reduce the oxidation of Ti films, and the Si layer plays a role of diffusion barrier to the intermixing of Ti and Co atoms. which was considered as a major cause for the large contact resistance.
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      Material and electrical properties of titanium-based ohmic contacts on p-type 4H-SiC were investigated depending on the post-annealing and the metal covering conditions. Best results are obtained as 4×l0^(-4) ohm.㎠ for Co/Si/Ti metal structures aft...

      Material and electrical properties of titanium-based ohmic contacts on p-type 4H-SiC were investigated depending on the post-annealing and the metal covering conditions. Best results are obtained as 4×l0^(-4) ohm.㎠ for Co/Si/Ti metal structures after a vacuum annealing at 850℃ for 60 sec. The contact resistance was measured by a transmission line technique, and the contact resistances were improved more than one order compared to Ti and Co/Ti contacts for the annealed samples at the same conditions. The Co layer is supposed to reduce the oxidation of Ti films, and the Si layer plays a role of diffusion barrier to the intermixing of Ti and Co atoms. which was considered as a major cause for the large contact resistance.

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      목차 (Table of Contents)

      • Introduction
      • Experimental details
      • Results and Discussion
      • Conclusions
      • Acknowledgments
      • Introduction
      • Experimental details
      • Results and Discussion
      • Conclusions
      • Acknowledgments
      • References
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