In this study, the red and blue luminescence from porous silicon without any rapid thermal oxidation is observed, especially for thin porous silicon. Ambient aging of thin ps which is prepared in dilute HF concentration for the short duration of etchi...
In this study, the red and blue luminescence from porous silicon without any rapid thermal oxidation is observed, especially for thin porous silicon. Ambient aging of thin ps which is prepared in dilute HF concentration for the short duration of etching time displays the increase of blue luminescence band with the reduction of the red PL band.
The blue and green photoluminescence is also observed for the spark precessed Si. These blue and green luminescity Si exhibit fast decay time in the range between ns and sub-ns. The measured decay time of ambient aged blue luminescity porous silicon show a decay time of loops at room temperature. Scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS) ahve been performed both on freshly prepared and ambient air aged thin porpous silicon. STM studies of these samples reveal the porousstructure and displays less than 5nm feature size for visible luminescing samples.
STS analysis of freshly prepared PS shows the expected increase in band-gap energy compared with unetched silicon. The ambient air aged porous silicon which exhibits both red and blue luminescence reveal an electronic structure similar to that obtained from STS.
Atmospheric aging of these thin porous silicon yields non-stoichiometric oxide judging from the vibrational spectra of Si-O AES analysis. The origin of red luminescence has same properties related to Si nanocrystallites, wheres blue lumiescence from ambient aged anodicaally etched porous silicon seems to be associated other than Si nanocrystallites.