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      Characteristics of Mobile Ions in the SiO2 films of SiC-MOS Structures

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      https://www.riss.kr/link?id=E805320

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      Characteristics of mobile ions in the SiO_(2) layers of 6H-SiC MOS structures have been studied by capacitance-voltage and thermally stimulated current measurements. Thermal oxidation was used to grow oxide layers on the Si-face of 6H-SiC, and post-oxidation annealing was performed in Ar-ambient. A single thermally stimulated current (TSC) peak was observed at about 450 K in the measured temperature ranges, and the peak is generated by positive mobile ions. The peak increased slightly and clearly shifted to higher temperatures with increasing the bias voltage V_(ｂ) up to 3.0 V. The mobile charge Q_(TSC) obtained from the TSC curves increased as V_(ｂ) increased, and almost coincided with Q_(CV) obtained from the flatband voltage shift in C-V characteristics. It is found that the behavior of mobile ions in SiO_(2) layers of SiC-MOS capacitors is similar to that of Si-MOS capacitors.
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      Characteristics of mobile ions in the SiO_(2) layers of 6H-SiC MOS structures have been studied by capacitance-voltage and thermally stimulated current measurements. Thermal oxidation was used to grow oxide layers on the Si-face of 6H-SiC, and post-ox...

      Characteristics of mobile ions in the SiO_(2) layers of 6H-SiC MOS structures have been studied by capacitance-voltage and thermally stimulated current measurements. Thermal oxidation was used to grow oxide layers on the Si-face of 6H-SiC, and post-oxidation annealing was performed in Ar-ambient. A single thermally stimulated current (TSC) peak was observed at about 450 K in the measured temperature ranges, and the peak is generated by positive mobile ions. The peak increased slightly and clearly shifted to higher temperatures with increasing the bias voltage V_(ｂ) up to 3.0 V. The mobile charge Q_(TSC) obtained from the TSC curves increased as V_(ｂ) increased, and almost coincided with Q_(CV) obtained from the flatband voltage shift in C-V characteristics. It is found that the behavior of mobile ions in SiO_(2) layers of SiC-MOS capacitors is similar to that of Si-MOS capacitors.

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      목차 (Table of Contents)

      • Introduction
      • Experimental
      • Results and Discussion
      • Summary
      • References
      • Introduction
      • Experimental
      • Results and Discussion
      • Summary
      • References
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