Photoluminescence(PL) has been applied to characterize the transition in contaminated n-GaAs with Iron. The PL spectrum of the bulk n-GaAs at 15 K showed two peaks, one is the DAP peak located at 1.477 eV and the other is the Ga vacancy peak around 1....
Photoluminescence(PL) has been applied to characterize the transition in contaminated n-GaAs with Iron. The PL spectrum of the bulk n-GaAs at 15 K showed two peaks, one is the DAP peak located at 1.477 eV and the other is the Ga vacancy peak around 1.4973 eV. The PL spectrum of the Fe contaminated n-GaAs showed peak located at 1.4795 eV with broade the full with half maximum that relate with Fe acceptors. From temperature dependent PL intensity, activation energy E_(u) is determined to be 35 meV.