<P>In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS<SUB>2</SUB>. Mechanically exfoliated MoS<SUB>2</SUB> flakes are transferred onto a Si layer; the res...
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https://www.riss.kr/link?id=A107524859
2019
-
MoS2 ; silicon ; photodetector ; p−
SCOPUS,SCIE
학술저널
7626-7634(9쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS<SUB>2</SUB>. Mechanically exfoliated MoS<SUB>2</SUB> flakes are transferred onto a Si layer; the res...
<P>In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS<SUB>2</SUB>. Mechanically exfoliated MoS<SUB>2</SUB> flakes are transferred onto a Si layer; the resulting Si-MoS<SUB>2</SUB> p-n photodiode shows excellent performance with a responsivity (<I>R</I>) and detectivity (<I>D*</I>) of 76.1 A/W and 10<SUP>12</SUP> Jones, respectively. In addition, the effect of the thickness of the depletion layer of the Si-MoS<SUB>2</SUB> heterojunction on performance is investigated using the depletion layer model; based on the obtained results, we optimize the photoresponse of the device by varying the MoS<SUB>2</SUB> thickness. Furthermore, low-frequency noise measurement is performed for the fabricated devices. The optimized device shows a low noise equivalent power (NEP) of 7.82 × 10<SUP>-15</SUP> W Hz<SUP>-1/2</SUP>. Therefore, our proposed device could be utilized for various optoelectronic devices for low-light detection.</P>
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