Characterization of CdSex Te1-x sintered films

다국어 초록 (Multilingual Abstract)

CdSexTe1-x is a promising ternary material which has received considerable attention due to its applications in the fabrication oflarge area economic solar cell, semiconductor-metal Schottky barrier cell, etc. This material possesses various advantages, princi-pally the high absorption coecient, optimum band gap and chemical stability, which make it attractive for this kind of devices.CdSexTe1. x lms with variable concentration (x ¼ 0 to 1) have been deposited onto ultra clean glass substrates by screen printingand then sintered. The optical, electrical and structural properties of CdSexTe1. x alloys have been studied, which were foundapplicable in photovoltaics. The optical band gap of these lms were determined by reectance measurements in the wavelengthrange of 700880 nm. The modication of band gap of intermixed CdSexTe1. x system has been described and was found suitable forecient absorption in the visible region of the spectrum. Schottky barrier height and ideality factor for Al/CdTe and Al/CdSejunctions were determined by currentvoltage characteristics. X-ray diraction patterns of these lms were reported. The lms wereof polycrystalline texture over the whole range studied and exhibit predominant cubic zinc blende structure. Sintering is very simpleand viable compared to other costly methods. It is a technique less time-consuming, of maximum material utility and less pollutantand oers a suitable method for preparing lms on large area substrares.

참고문헌 (Reference)

1 "Solar Energy Mater" 57 : 323-, 1999

2 "Physics of Semiconductor Devices" 1979