Bandgap voltage reference circuits, used in battery-operated portable equipments should be able to be designed using standard digital CMOS process and present low-power operation. In this paper a CMOS bandgap voltage reference using self-cascode MOSFE...
Bandgap voltage reference circuits, used in battery-operated portable equipments should be able to be designed using standard digital CMOS process and present low-power operation. In this paper a CMOS bandgap voltage reference using self-cascode MOSFET is designed. Self-cascode bandgap voltage reference was utilized by 0.18um CMOS technology and simulated by Cadence Specter. Its temperature coefficient(TC) is typically 29.70ppm/℃ in the temperature of -25℃ to 100℃ and its output resistance of optimized self-cascode bandgap voltage reference is nearly 225MΩ.