<P>Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by <B>k</B><B>·</B><B>p</B> theory including effects of strain ...
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https://www.riss.kr/link?id=A107499029
2016
-
SCOPUS
학술저널
309
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by <B>k</B><B>·</B><B>p</B> theory including effects of strain ...
<P>Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by <B>k</B><B>·</B><B>p</B> theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement.</P><P><B>Electronic supplementary material</B></P><P>The online version of this article (doi:10.1186/s11671-016-1518-2) contains supplementary material, which is available to authorized users.</P>
Characterization of Bimetallic Fe-Ru Oxide Nanoparticles Prepared by Liquid-Phase Plasma Method