Graphene Synthesis from Graphite/Ni Composite Films Grown by Sputtering

다국어 초록 (Multilingual Abstract)

Graphite/Ni composite films have been deposited on SiO<SUB>2</SUB>/Si (100) wafers by varying their graphite concentration (<I>n</I><SUB>G</SUB>) and thickness (t) from 2 to 12 wt % and 40 to 400 nm, respectively in a RF sputtering system, subsequently annealed at 900 ℃ for 4 min, and then slowly cooled to room temperature to form graphene layer on Ni surface. Several structural-analysis techniques reveal optimum <I>n</I><SUB>G</SUB> (~8 wt %) and t (~160 nm) of the composite films for the synthesis of fewest-layer and defect-minimized graphene. At the annealing temperature, carbon atoms diffuse out from the composite film followed by their precipitation as graphene on the Ni layer as the carbon solubility limit in Ni is reached during the cooling period. Based on this mechanism, the optimum conditions are explained. Our approach provides advantages to tune the number of layers simply by varying <I>n</I><SUB>G</SUB> and t of the composite films.

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