Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications

다국어 초록 (Multilingual Abstract)

In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET) architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. DEVICE ARCHITECTURE DESCRIPTION AND SIMULATION
• Ⅲ. FORMULATION OF AMBIPOLAR CHARACTERISTIC PARAMETER
• Ⅳ. IMPACT OF STRUCTURAL MODIFICATIONS
• Ⅴ. COMBINATIONAL CIRCUIT OPERATION AND IMPACT OF AMBIPOLARITY
• Ⅴ. CONCLUSIONS
• ACKNOWLEDGMENTS
• REFERENCES

참고문헌 (Reference)

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