In order to increase the growth rate of Ni Metal Induced Lateral Crystallization(MILC) of amorphous Si which shows acceptable electrical properties. Pd thin films were deposited on amorphous Si with a distance to Ni deposited area. The shorter the spa...
In order to increase the growth rate of Ni Metal Induced Lateral Crystallization(MILC) of amorphous Si which shows acceptable electrical properties. Pd thin films were deposited on amorphous Si with a distance to Ni deposited area. The shorter the space between the Ni and Pd films, the faster the rate of Ni MILC, and when the space was 60 ㎛ the growth rate was 7.5 ㎛/hr. Through TEM microstructural analysis and investigation on relationships between the space and growth rate the enhanced growth rate of Ni-MILC turned out to be due to stresses generated by the formation of Pd₂Si under/at Pd deposited area. Using Pd assisted. Ni-MILC method, 0.8 ㎛/hr of MILC growth rate could be obtained at the temperature as low as 450℃.