<P>In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O...
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https://www.riss.kr/link?id=A107485559
2016
-
학술저널
4788-4791(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O...
<P>In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O-2/(Ar + O-2)) and subsequent annealing process. The electrical properties exhibited by this device include field-effect mobility (mu(eff)), sub-threshold swing (SS), and on/off current ratio (I-ON/OFF) values of 28.97 cm(2)/V.s, 0.2 V/decade, and 2.64 x 10(7), respectively. The average transmittance values for each OPP condition in the visible range were greater than 80%. The positive gate bias stress resulted in a positive threshold voltage (V-th) shift in the transfer curves and degraded the parameters mu(eff) and SS. These phenomena originated from electron trapping from the ITZO channel layer into the oxide/ITZO interface trap sites.</P>
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