Numerical Modeling of an Inductively Coupled Plasma Sputter Sublimation Deposition System

다국어 초록 (Multilingual Abstract)

Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.

참고문헌 (Reference)

1 J. Lee, 169/170 : 353-, 2003

2 W. Yang, 12 : S99-, 2012

3 D.-K. Lee, 173/174 : 1234-, 2003

4 J. Lin, 518 : 1566-, 2009

5 유영군, "유도 결합 플라즈마-스퍼터 승화법을 이용한 고분자 전해질 연료전지 분리판용 CrN 박막의 내식성연구" 한국표면공학회 46 (46): 168-174, 2013

6 최지성, "유도 결합 플라즈마 스퍼터 승화법을 이용한 고속증착 시스템" 한국표면공학회 45 (45): 75-80, 2012

7 S. Camphausen, "Society of Vacuum Coaters" 313-, 2008

8 M. Lieberman, "Principles of Plasma discharges and materials processing" John Wiley & Sons, Inc 242-, 1994

9 "FD-ACE+ user manual module II"

10 "CFD-ACE+ user manual module II"