전자-포논 상호작용 모델을 이용한 실리콘 박막 소자의 포논 평균자유행로 스펙트럼 열전도 기여도 수치적 연구

국문 초록 (Abstract)

본 연구의 목적은 실제 실리콘 박막 트랜지스터 내 포논 전달 특성을 이해하는 것이다. 이를 위해 박막 소자 내 열해석 예측 정확성이 검증된 전자-포논 상호작용 모델을 이용하여 반도체 산업에서 중요한 Silicon-on-Insulator(SOI) 시스템에 대한 다양한 조건에서 전자-포논 산란에 의한 Joule 가열 메커니즘의 고려하여 포논 전달 해석을 수행했다. 소자 장치 전원(device power)과 실리콘 층 두께 변화에 따른 포논의 평균자유행로(mean free path) 스펙트럼에 대한 열적 특성을 조사하여, 실제 SOI 소자 내 포논 전달을 이해했다. 이 결과는 SOI 소자의 신뢰성 설계 및 고효율 열소산(heat dissipation) 설계전략에 필요한 포논 전달 특성 이해에 활용될 수 있다.

다국어 초록 (Multilingual Abstract)

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

목차 (Table of Contents)

• 초록
• Abstract
• 1. 서론
• 2. 해석모델 및 해석방법
• 3. 해석결과 및 고찰
• 4. 결론
• 참고문헌

참고문헌 (Reference)

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