열산화법으로 형성한 Pt-SnO2-x 박막소자의 CO 가스 감지특성 = CO Sensing Characteristics of Pt-SnO2-x Thin Film Devices Fabricated by Thermal Oxidation

다국어 초록 (Multilingual Abstract)

Pt-SnO(2-x) thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was 4000 Å and the thickness of Pt deposited by D.C. sputtering on 5n thin film was 14∼71 Å range. The XRD analysis show that the Pt-SnO(2-x) thin films are` formed by grains with a diameter of about 200 Å randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. Pt-SnO_(2-x) thin film device (Pt thickness : 43 Å) to 6000 ppm CO shows the sensitivity of 80 % and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of Pt-SnO_(2-x) thin film device with high sensitivity to CO were 200℃ and 500℃, respectively.