In this paper, Self-Heating Effect (SHE) according to depth of STI was analyzed and STI thickness optimization was performed in the plate-shaped vertical field effect transistor (VFET). In case of a VFET, the path of leakage current (I<SUB>off&l...
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다국어 초록 (Multilingual Abstract)
In this paper, Self-Heating Effect (SHE) according to depth of STI was analyzed and STI thickness optimization was performed in the plate-shaped vertical field effect transistor (VFET). In case of a VFET, the path of leakage current (I<SUB>off&l...
In this paper, Self-Heating Effect (SHE) according to depth of STI was analyzed and STI thickness optimization was performed in the plate-shaped vertical field effect transistor (VFET). In case of a VFET, the path of leakage current (I<SUB>off</SUB>) is different from that of a lateral FET (LFET). Asa result, I<SUB>off</SUB> of VFET is not influenced by STI depth. For this reason, the STI depth of the VFET is not needed as much as the depth needed to reduce I<SUB>off</SUB> in the LFET. Asa result, if the STI depth of the VFET is reduced from 100nm to 20nm, which is the drain region depth doped with Arsenic, thermal resistance (R<SUB>th</SUB>) is expected to be reduced by 32.19% and on current (I<SUB>on</SUB>) is expected to be increased by 1.54% without affecting the I<SUB>off</SUB> as compared with STI depth of 100nm in VFET.