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    A Low Power Broadband Differential Low Noise Amplifier Employing Noise and IM3 Distortion Cancellation for Mobile Broadcast Receivers

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    https://www.riss.kr/link?id=A107584587

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    <P>A CMOS broadband differential low noise amplifier (LNA) employing noise and third order intermodulation (IM3) distortion cancellation has been designed using a 0.13 μm CMOS process for mobile TV tuners. By combining a common gate amplifier with a common source amplifier through a current mirror, a high gain due to the additional current amplification and a low noise figure (NF) due to the thermal noise cancellation can be achieved with low power consumption without degrading the input matching. To improve the linearity with low power consumption, a multiple gated transistor technique for canceling the IM3 distortion is adopted. The proposed LNA has a maximum gain of 14.5 dB, an averaged NF of 3.6 dB, an IIP3 of 3 dBm, an IIP2 of 38 dBm, and an |Sn<SUB>11</SUB>| lower than -9 dB in a frequency range from 72 to 850 MHz. The power consumption is 9.6 mW at a 1.2 V supply voltage and the chip area is 0.08 mm<SUP>2</SUP>.</P>
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    <P>A CMOS broadband differential low noise amplifier (LNA) employing noise and third order intermodulation (IM3) distortion cancellation has been designed using a 0.13 μm CMOS process for mobile TV tuners. By combining a common gate ampli...

    <P>A CMOS broadband differential low noise amplifier (LNA) employing noise and third order intermodulation (IM3) distortion cancellation has been designed using a 0.13 μm CMOS process for mobile TV tuners. By combining a common gate amplifier with a common source amplifier through a current mirror, a high gain due to the additional current amplification and a low noise figure (NF) due to the thermal noise cancellation can be achieved with low power consumption without degrading the input matching. To improve the linearity with low power consumption, a multiple gated transistor technique for canceling the IM3 distortion is adopted. The proposed LNA has a maximum gain of 14.5 dB, an averaged NF of 3.6 dB, an IIP3 of 3 dBm, an IIP2 of 38 dBm, and an |Sn<SUB>11</SUB>| lower than -9 dB in a frequency range from 72 to 850 MHz. The power consumption is 9.6 mW at a 1.2 V supply voltage and the chip area is 0.08 mm<SUP>2</SUP>.</P>

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