Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

다국어 초록 (Multilingual Abstract)

A novel method for the parameter extraction of thin-fi lm transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.

참고문헌 (Reference)

1 J.V.T. Ferreira, "Ultra‐low‐voltage CMOS ring oscillators" Institution of Engineering and Technology (IET) 55 (55): 523-525, 2019

2 Luiz A.P. Melek, "Ultra-low voltage CMOS logic circuits" IEEE 1-7, 2014

3 R.J. Van Overstraeten, "Theory of the MOS transistor in weak inversion-new method to determine the number of surface states" Institute of Electrical and Electronics Engineers (IEEE) 22 (22): 282-288, 1975

4 Sungsik Lee, "Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain" American Association for the Advancement of Science (AAAS) 354 (354): 302-304, 2016

5 D.K. Schroeder, "Semiconductor Material and Device Characterization" Wiley 2006

6 J.C. Ranuárez, "Procedure for determining diode parameters at very low forward voltage" Elsevier BV 43 (43): 2129-2133, 1999

7 Rodolfo Rodriguez-Davila, "On the DC extraction of the asymmetric parasitic source and drain resistances for MOSFETs" Elsevier BV 164 : 107700-, 2020

8 M.C. Schneider, "Interrelations between threshold voltage defi nitions and extraction methods" 868-871, 2006

9 Adelmo Ortiz-Conde, "Integration-based approach to evaluate the sub-threshold slope of MOSFETs" Elsevier BV 50 (50): 312-315, 2010

10 Carlos Avila-Avendano, "Integrated Thin-Film Radiation Detectors and In-Pixel Amplification" Institute of Electrical and Electronics Engineers (IEEE) 65 (65): 3809-3815, 2018

11 M. Estrada, "Extraction method for polycrystalline TFT above and below threshold model parameters" Elsevier BV 46 (46): 2295-2300, 2002

12 G. Ghibaudo, "Critical MOSFETs operation for low voltage/low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations" Elsevier BV 39 (39): 31-57, 1997

13 Paul A. Muls, "Characterization of the Mosfet Operating in Weak Inversion" Elsevier 47 : 197-266, 1978

14 Sungsik Lee, "Bias-dependent subthreshold characteristics and interface states in disordered semiconductor thin-film transistors" IOP Publishing 34 (34): 11LT01-, 2019

15 Sungsik Lee, "A semiphysical current–voltage model with a contact ideality factor for disordered thin-film transistors" Springer Science and Business Media LLC 17 (17): 1615-1620, 2018

16 Rodolfo Rodriguez-Davila, "A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs" Institute of Electrical and Electronics Engineers (IEEE) 66 (66): 2979-2985, 2019

17 Andrea Sucre-Gonzalez, "A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs" Institute of Electrical and Electronics Engineers (IEEE) 63 (63): 1821-1826, 2016

18 Arthur Campos de Oliveira, "A 0.12–0.4 V, Versatile 3-Transistor CMOS Voltage Reference for Ultra-Low Power Systems" Institute of Electrical and Electronics Engineers (IEEE) 65 (65): 3790-3799, 2018