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다국어 초록 (Multilingual Abstract)

Recently, nanoimprint lithography method has been used to fabricate polymer nanostructures on various substrates such as Si wafer, metal-layer, organic or inorganic materials. Accordingly, the extensive efforts have been made to obtain small polymer nanostructures by using special mold, which having much small size of pattern. Meanwhile, the polymeric residual layer that remains under the nanostructures after process of nanoimprint, is not thin compared with the height of nanostructures. Frequently, polymeric nanostructure is used as barrier in etching process, additional process will be needed to remove the remained residual layer. In this research, we demonstrate very thin residual polymeric layer under nanostructures that leads to direct etching of substrate.