Dielectric relaxation in bismuth layer-structured BaBi_4Ti_4O_15 ferroelectric ceramics

다국어 초록 (Multilingual Abstract)

The dielectric properties of BaBi_4Ti_4O_15 ceramics were investigated as a function of frequency (10^2―10^6 Hz)at various temperatures (30℃―470 ℃), covering the phase transition temperature. Two different conduction mechanisms were obtained by fitting the complex impedance data to Cole―Cole equation. The grain and grain boundary resistivities were found to follow the Arrhenius law associated with activation energies: Eg ∼ 1.12 eV below Tm and Eg ∼ 0.70 eV above T_m for the grain conduction; and E_gb ∼ 0.93 eV below T_m and E_gb ∼ 0.71 eV above T_m for the grain boundary conduction. Relaxation times extracted using imaginary part of complex impedance Z˝(ω) and modulus M˝(ω) were also found to follow the Arrhenius law and showed an anomaly around the phase transition temperature. The frequency dependence of conductivitywas interpreted in terms of the jump relaxation model andwas fitted to the double power law.

참고문헌 (Reference)

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