A silicon n-i-p nuclear radiation detector consists of intrinsic layer sandwiched between p and n layers. This detector can therefore be used to measure high energy particles and gamma rays. But production method by thermal diffusion technique has dis...
A silicon n-i-p nuclear radiation detector consists of intrinsic layer sandwiched between p and n layers. This detector can therefore be used to measure high energy particles and gamma rays. But production method by thermal diffusion technique has disadvantages due to the thick window layer of a few hundred micron and the difficulties of controlling the impurity concentration precisely. In this research these obstacles were overcomed by using ion-implantation technique. The ?? ions of energy range from 10 to 40 keV were implanted into 80 ohm-㎝ resistively p-type silicon wafer through magnetic analyzer and obtained 2㎛ window thickness. Details of fabrication method and result of n-i-p radiation detector are described.