A unied electron and hole mobility model for inversion and accumulation layers with quantum eect is presented for the rst time. By accounting for the screened Coulomb scattering based on the well-known bulk mobility model and allowing the surface roug...
A unied electron and hole mobility model for inversion and accumulation layers with quantum eect is presented for the rst time. By accounting for the screened Coulomb scattering based on the well-known bulk mobility model and allowing the surface roughness scattering term to be a function of net charge, the new model is applicable to the bulk, inversion, and accumulation layers with only one set of tting parameters. The new model is implemented in the 2-D quantum mechanical device simulator and gives excellent agreement with the experimentally measured eective mobility data over a wide range of eective transverse eld, substrate doping, substrate bias, and temperature.