1 D. B. Strukov, "The missing memristor found" 453 : 80-83, 2008
2 최준명, "PCB에 구현한 멤리스터 에뮬레이터 회로 및 응용" 한국전기전자학회 17 (17): 324-331, 2013
3 L. O. Chua, "Memristor-the missing circuit element" 18 : 507-519, 1971
4 S. J. Ham, "Low-power VDD/3 write scheme with inversion coding circuit for complementary memristor array" 12 (12): 851-857, 2013
5 "International Technology Roadmap for Semiconductors (ITRS) in 2011"
6 C. Kügeler, "High density 3D memory architecture based on the resistive switching effect" 53 (53): 1287-1292, 2009
7 A. Flocke, "Fundamental analysis of resistive nanocrossbars for the use in hybrid nano/CMOS-memory" 328-331, 2007
8 J. Liang, "Cross-point memory array without cell selectors-device characteristics and data storage pattern dependencies" 57 (57): 2531-2538, 2010
9 C. J. Chevallier, "A 0.13 μm 64Mb multi-layered conductive metal-oxide memory" 260-261, 2010
1 D. B. Strukov, "The missing memristor found" 453 : 80-83, 2008
2 최준명, "PCB에 구현한 멤리스터 에뮬레이터 회로 및 응용" 한국전기전자학회 17 (17): 324-331, 2013
3 L. O. Chua, "Memristor-the missing circuit element" 18 : 507-519, 1971
4 S. J. Ham, "Low-power VDD/3 write scheme with inversion coding circuit for complementary memristor array" 12 (12): 851-857, 2013
5 "International Technology Roadmap for Semiconductors (ITRS) in 2011"
6 C. Kügeler, "High density 3D memory architecture based on the resistive switching effect" 53 (53): 1287-1292, 2009
7 A. Flocke, "Fundamental analysis of resistive nanocrossbars for the use in hybrid nano/CMOS-memory" 328-331, 2007
8 J. Liang, "Cross-point memory array without cell selectors-device characteristics and data storage pattern dependencies" 57 (57): 2531-2538, 2010
9 C. J. Chevallier, "A 0.13 μm 64Mb multi-layered conductive metal-oxide memory" 260-261, 2010