The asymmetric fingered structure for polysilicon thin-film transistors (AF-TFTs) is analysed in
detail by combining experimental characteristics and two-dimensional numerical simulations. This
structure allows an effective reduction of the kink effec...
The asymmetric fingered structure for polysilicon thin-film transistors (AF-TFTs) is analysed in
detail by combining experimental characteristics and two-dimensional numerical simulations. This
structure allows an effective reduction of the kink effect and off-current, without introducing any
additional series resistance. In addition, a substantial improvement in the device stability is also
observed when compared to conventional TFT. The AF-TFT characteristics have been explained
by considering a two transistor model.