MIC 회로소자의 S-파라메타 측정에 관한 연구 = S study on the measurement of S-parameter of circuit-elements MIC

다국어 초록 (Multilingual Abstract)

In order characterize the packaged microwave semiconductor active devices, the test fixture is required to connect the measuring systems with the measured devices.
In this paper, useful test fixture is fabricated for estimating the variable types of the measured devicesm by which can be simply connected and separated the measuring system or the measured devices. A novel de-embedding procedure is also proposed for the calibration of the embedding network. That is, the method is to characterize the embedding network by using two microstrip lines with different lengths. Corresponding to the calibrating procedure in terms of this method, AFT 13736 MESFET is characterized. The range of frequency is 2 to 18GHz, the bias is ?? = 2.5V, ?? = 20mA.
Compared the calibrated data with data sheet, the mangnitudes are differed somewhat and phase difference is represented as 0.1。 to 12。.
MIC amplifier, its input and output matching networks are fabricated and measured. By using de-embedding program, S-parameters of active device are extracted from MIC amplifier. The range of frequency is 6 to 7GHz, and the bias ?? = 2.5V, ?? = 20mA.
S-parameters of MIC, input and output matching networks are simulated by using
TOUCHSTONE program. The data are campared with the measured data. And
S-parameters of FET extracted from the designed MIC amplifier are compared with
S-parameters of FET extracter from the measured data.

목차 (Table of Contents)

• ABSTRACT
• Ⅰ. 서 론
• Ⅱ. Embedding Nerwork 특성화
• Ⅱ-1 측정 기준면 변동
• Ⅱ-1-1 종속접속 행령 (R 행렬)
• Ⅱ-1-2 기준면 변동
• Ⅱ-2 Embedding Network 표현
• Ⅲ. De-embedding
• Ⅲ-1 능동소자 특성화
• Ⅲ-2 정합회로 De-embedding
• Ⅳ. Test Fixture
• Ⅴ. 실험 및 고찰
• Ⅵ. 결 론
• 참고문헌