저항방사열계 적외선 감지기 제조를 우한 바나듐 산화막의 전기적 특성 및 유전 특성 = Electrical and Dielectric Properties of Vanadium Oxide Thin Films for Fabrication of Bolometric IR Detector

다국어 초록 (Multilingual Abstract)

For fabrication of bolometric infrared detector, thin films of vanadium oxide(VO_x) was deposited by r.f. magnetron sputtering from V_2O_2 target in 10% gas mixture of argon and oxygen, and in-situ annealed in vacuum with different temperatures and times. Crystal structure and surface morphology of films were characterized through XRD and SEM. In order to measure the current-voltage characteristics, temperature dependence of conductance, and dielectric properties of vanadium oxide, Al/VO_x/Al sandwich devices structure was adopted.
The films prepared below 200℃ were amorphous, and those prepared above 300℃ were polycrystalline. Above 3×10＾4V/cm conduction of vanadium oxide is limited by space charge formed near eletrode. Conduction mechanisms above 10＾5V/cm are due to Schottky emission and Fowler-Nordheim tunneling effects. Resistance and capacitance of grain boundary are decreased with increasing annealing temperature. Oxygen vacancy is related to the localized state and non-stoichiomeric of vanadium oxide.