Fully Integrated Ka-Band Power Amplifier with Parallel Power Combiner using Single-Winding Transformer

다국어 초록 (Multilingual Abstract)

This paper presents a Ka-band linear CMOS power amplifier (PA) with a parallel power combiner using single-winding transformer to increase the output power with low loss in 65nm CMOS technology for fifth generation (5G) applications. Two differential cascode unit PAs are combined with the proposed parallel power combiner as a current combining topology. Compared with the conventional transformer power combining techniques, the proposed parallel power combiner can offer high output power with a compact die area.
Upon simulation with a 28 GHz continuous-wave signal, the proposed PA achieves a saturated output power (PSAT) of 25.0 dBm, output 1-dB compression power (PO,1dB) of 22.6 dBm, and peak power added efficiency (PAE) of 34.7%, respectively. A power gain of 28.1 dB is achieved with a 3 dB bandwidth of 5 GHz. This PA achieves one of the highest figures-of-merit (FOM) among the recently reported 5G millimeter-wave (mm-wave) PAs in CMOS.

참고문헌 (Reference)

1 G. J. Gu, "Two-way current-combining W-band power amplifier in 65-nm CMOS" 60 (60): 1365-1374, 2012

2 E. Kaymaksut, "Transformer-based Doherty power amplifiers for mm-wave applications in 40-nm CMOS" 63 (63): 1186-1192, 2015

3 J. A. Jayamon, "Multigate-cell stacked FET design for millimeter-wave CMOS power amplifiers" 51 (51): 2027-2037, 2016

4 Y. Hsiao, "Millimeter-wave CMOS power amplifiers with high output power and wideband performances" 61 (61): 4520-4533, 2013

5 B. ark, "Highly Linear mm-wave CMOS Power Amplifier" 64 (64): 4535-4544, 2016

6 Y.-N. Jen, "Design and analysis of a 55–71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process" 57 (57): 1637-1646, 2009

7 M. Bohsali, "Current combining 60GHz CMOS power amplifiers" 31-34, 2009

8 H. Dabag, "Analysis and design of stacked-FET millimeter-wave power amplifiers" 61 (61): 1543-1556, 2013

9 Y. Zhao, "A wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS" 47 (47): 1981-1997, 2012

10 S. Pornpromlikit, "A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS" 58 (58): 57-64, 2010

11 H. Ahn, "A highly efficient WLAN CMOS PA with two-winding and single-winding combined transformer" 310-313, 2016

12 H. Ahn, "A fully integrated dual-mode CMOS power amplifier with an autotransformer-based parallel combining transformer" 27 (27): 833-835, 2017

13 V. A. Solomko, "A fully integrated 4. 4-3. 8-GHz power amplifier with autotransformer balun" 57 (57): 2160-2172, 2009

14 M. Nariman, "A compact 60-GHz wireless power transfer system" 64 (64): 2664-2677, 2016

15 W. Tai, "A W-band 21.1 dBm power amplifier with an 8-way zero-degree combiner in 45 nm SOI CMOS" 1-3, 2014

16 W. Huang, "A K-band power amplifier with 26-dBm output power and 34% PAE with novel inductancebased neutralization in 90-nm CMOS" 228-231, 2018

17 C. Chappidi, "A Frequency-Reconfigurable Mm-wave Power Amplifier with Active-Impedance Synthesis in an Asymmetrical Non-Isolated Combiner" 344-345, 2016

18 J. Oh, "A 77-GHz CMOS power amplifier with a parallel power combiner based on transmission-line transformer" 61 (61): 2662-2669, 2013

19 M. Thian, "A 76–84 GHz SiGe power amplifier array employing low-loss fourway differential combining transformer" 61 (61): 931-938, 2013

20 H. -C. Lin, "A 70–80-GHz SiGe amplifier with peak output power of 27. 3 dBm" 64 (64): 2039-2049, 2016

21 C. -W. Tseng, "A 60 GHz 19.6 dBm power amplifier with 18.3% PAE in 40 nm CMOS" 25 (25): 121-123, 2015

22 S. N. Ali, "A 28 GHz 41%-PAE linear CMOS power amplifier using a transformer based AM-PM distortion-correction technique for 5G phased arrays" 406-408, 2018

23 U. Pfeiffer, "A 23-dBm 60-GHz distributed active transformer in a silicon process technology" 55 (55): 857-865, 2007

24 J. -W. Lai, "A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS" 424-425, 2010

25 D. Zhao, "A 0. 9V 20. 9dBm 22. 3%-PAE E-band power amplifier with broadband parallelseries power combiner in 40nm CMOS" 248-249, 2014

26 W. Tai, "A 0. 7 W fully integrated 42 GHz power amplifier with 10% PAE in 0. 13 m SiGe BiCMOS" 142-143, 2013

27 J. Xia, "60-GHz power amplifier in 45-nm SOICMOS using stacked transformer-based parallel power combiner" 28 (28): 711-713, 2018