<P>Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) ...
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https://www.riss.kr/link?id=A107573496
2010
-
SCOPUS,SCIE
학술저널
224-230(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) ...
<P>Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported. A reversible shift in the threshold voltage (V<SUB>Th</SUB>) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross-linked poly(4-vinylphenol). The F8T2 NFGM showed relatively high field-effect mobility (µ<SUB>FET</SUB>) (0.02 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10<SUP>4</SUP>) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top-gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.</P>
<B>Graphic Abstract</B>
<P>Solution-processed top-gate field-effect transistor (FET) memory with incorporated Au nanoparticles (NPs) in double-layered polymer gate dielectrics is fabricated using PS, cross-linked PVP, and poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2). The threshold voltage is reversibly and systemically controlled by application of appropriate gate biases, which mainly originates from negative charge trapping in the Au NPs. This could be utilized as a key element in organic flash memory.
<img src='wiley_img/1616301X-2010-20-2-ADFM200901677-content.gif' alt='wiley_img/1616301X-2010-20-2-ADFM200901677-content'>
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