Pb(Zr_x,Ti_1-x)O_3(PZT) thin films were deposited on Si substrates using MgTiO_3 as the buffer layer and the electrical properties of those MFIS structures were investigated PZT MgTiO_3 films were made by MOCVD using ultrasonic spraying technique Pero...
Pb(Zr_x,Ti_1-x)O_3(PZT) thin films were deposited on Si substrates using MgTiO_3 as the buffer layer and the electrical properties of those MFIS structures were investigated PZT MgTiO_3 films were made by MOCVD using ultrasonic spraying technique Perovskite PZT films have been successfully made at the substrate temperature of 550 to 600℃ only when using MgTiO_3 buffer layer AES depth profile analysis and RBS analysis revealed that there is no remarkable interdiffusion and no formation of reaction layer between PZT and MgTiO_3 and/or between MgTiO_3 and Si substrate The capacitance-voltage (C-V) curves of the MFIS structure which were made with PZT and MgTiO_3 buffer layer have shown the hysteresis resulted from the ferroelectric switching of the PZT films