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      유기금속분해 법에 의한 ITO 박막의 제조 및 특성 = Characterization of ITO Films Prepared by Metal Organic Decomposition

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      https://www.riss.kr/link?id=A106787895

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      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

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      Thin films of Indium tin oxie (ITO) were prepared by the process of metal organic decomposition. Light transmittance and electrical transport properties of the films were studied with varying the firing temperature and SnO$_2$content. XRD study showed that tin substituted indium in the In$_2$O$_3$lattice. The resistivity had the minimum value of 2.5 ${\times}$ 10$\^$-3/$\Omega$-cm when the content of SnO$_2$was 9wt.%. This value was higher by a factor of 10 than the previously reported results. This difference was attributed to the low mobilities presumably caused by the fine grain size. The transmittance of ITO films in the visible range was over 90%, and the optical energy gap calculated from the absorption edge was in the range of 4.51 and 4.96eV.
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      Thin films of Indium tin oxie (ITO) were prepared by the process of metal organic decomposition. Light transmittance and electrical transport properties of the films were studied with varying the firing temperature and SnO$_2$content. XRD study showed...

      Thin films of Indium tin oxie (ITO) were prepared by the process of metal organic decomposition. Light transmittance and electrical transport properties of the films were studied with varying the firing temperature and SnO$_2$content. XRD study showed that tin substituted indium in the In$_2$O$_3$lattice. The resistivity had the minimum value of 2.5 ${\times}$ 10$\^$-3/$\Omega$-cm when the content of SnO$_2$was 9wt.%. This value was higher by a factor of 10 than the previously reported results. This difference was attributed to the low mobilities presumably caused by the fine grain size. The transmittance of ITO films in the visible range was over 90%, and the optical energy gap calculated from the absorption edge was in the range of 4.51 and 4.96eV.

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