ZnO 투명전도막의 전기적 특성에 미치는 Al₂O₃의 도핑 농도의 효과 = Effect of doping amounts of Al₂O₃on the electrical properties of ZnO transparent conducting films

다국어 초록 (Multilingual Abstract)

Al doped Zinc Oxide(ZnO:AI) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of Al₂0₃ on the electrical, optical and morphological properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of indium which exhibit a resistivity of 8.5×10^(-4)Ω-cm associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.