RF 마그네트론 스퍼터링법으로 증착된 Al 도핑된 ZnO 투명 전도 산화막의 Ar 유량에 따른 특성 = Properties of Al-doped ZnO Transparent Conducting Oxide Films Deposited with Ar Flow Rate by RF Magnetron Sputtering

다국어 초록 (Multilingual Abstract)

Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.

참고문헌 (Reference)

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10 조신호, "라디오파 마그네트론 스퍼터링으로 증착된 AZO 박막의 특성에 대한 급속 열처리 효과" 한국진공학회 18 (18): 377-383, 2009

11 이지수, "RF 마그네트론 스퍼터링 법으로 유리 기판 위에 성장 시킨 Ga 도핑된 ZnO 박막의 열처리에 따른 구조적, 광학적 특성 평가" 한국진공학회 17 (17): 23-27, 2008