태양전지응용을 위하여 MOCVD 방법으로 성장된 ZnO 박막의 기판온도에 따른 표면특성 = The Surface Morphology of ZnO Grown by Metal Organic Chemical Vapor Deposition for an Application of Solar Cell

다국어 초록 (Multilingual Abstract)

We report on the deposition of ZnO films using a metal organic chemical vapor deposition (MOCVD) as a function of pushing pressure and kind of reactant such as oxygen gas and water A diethylzinc (DEZ) is supplied and controlled by Ar pushing pressure through bubbling system. Oxygen gas and water are used as reactant in order to form oxidation. We knew that the surface roughness is related in the process conditions such as reactant kind and DEZ flow rate. A substrate temperature has little role of surface roughness with $O_2$ reactant. However, $H_2O$ reactant makes it to increase over the 20 times. We could get the maximum roughness of 39.16 nm at the 90 sccm of DEZ Ar flow rate, the 8 Pa of $H_2O$ vapor pressure, and the $140^{\circ}C$ of substrate temperature. In this paper, we investigated the ZnO films for the application to the light absorption layer of solar cell layer.

참고문헌 (Reference)

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15 선정호, "ZnO 분말 타겟을 스퍼터링하여 Glass 기판위에 증착한 ZnO 박막의 구조적, 광학적 특성" 한국진공학회 18 (18): 394-401, 2009

16 전민현, "RF magnetron sputtering 법으로 증착된 GZO와 ZnO 박막의 광학적 특성" 한국진공학회 16 (16): 453-457, 2007

17 남형진, "Effects of H₂O Introduction during ZnO Deposition by rf Magnetron Sputtering" 한국물리학회 53 (53): 3273-3277, 2008