The electrical properties of GaSb films were investigated. Electrical properties were measured by Hal1 measurements with Van der Pauw configuration and performed in the temperature range from 10 to 300K. Te doped GaSb layers (with/without ZnTe buffer)...
The electrical properties of GaSb films were investigated. Electrical properties were measured by Hal1 measurements with Van der Pauw configuration and performed in the temperature range from 10 to 300K. Te doped GaSb layers (with/without ZnTe buffer) were grown by molecular beam epitaxy. The experimental results are compared to the theory, Brooks-Herring scattering theory, based on the two-layer Hal1 effect model. We considered the four major scattering mechanisms effects. The role of ZnTe buffer to the electrical properties is discussed.