An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology

다국어 초록 (Multilingual Abstract)

This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.

참고문헌 (Reference)

1 J.-S. Rieh, "SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications" 52 : 2390-2408, 2004

2 B. Heinemann, "SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2. 0 ps CML gate delay" 30.5.1-30.5.4, 2010

3 Z. Xu, "D-band CMOS transmitter and receiver for multi-gigabit/ sec wireless data link" 1-4, 2010

4 B. Thomas, "Broadband 835-900- GHz Fundamental Balanced Mixer Based on Monolithic GaAs Membrane Schottky Diodes" 58 : 1917-1924, 2010

5 D. Yoon, "A 200-GHz Heterodyne Image Receiver with an Integrated VCO in a SiGe BiCMOS Technology" 2014

6 E. Laskin, "A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters" 178-181, 2009