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      KCI등재 SCOPUS

      연구논문초록(’81-’90) : 배관방식용 유전양극의 접지전지 특성에 관한 연구 = The Grounding Cell Characteristics of Galvanic Anodes for Corrosion Protection of Pipings .

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      https://www.riss.kr/link?id=A3269401

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      다국어 초록 (Multilingual Abstract)

      This paper used for designing the grounding cell has reached the following conclusion as the results of an experimental study on the grounding cell characteristics of galvanic anodes for corrosion protection of pipings. The galvanic anode have three kinds such as zinc alloy anode, aluminium alloy anode and magnesium alloy anode, which are widely used on cathodic protection for all metals structures in water or under ground, and Silicon diodes are used on the insulation joint protective device :
      1) in order to drain a certain electric current from a certain impressed voltage, the active area of anode should be increased but the space between anodes should be lessened as possible in the case of the environmental condition of high specific resistance.
      2) Among these three kinds of galvanic anodes, when the specific resistance of the environment was bellow 750Ω. cm, zinc alloy anode was best, and when above 750Ω cm, magnesium alloy anode used for grounding cell characteristics was the best, but aluminium alloy anode in all the environments reduced grounding cell characteristics to the lower grade than those of zinc alloy anode.
      3) The impressed voltage at which drainage current density begins rapidly increasing becomes lowered in all anodes according as the specific resistance of the environment increases.
      4) The approximate relations of drainage current density and impressed voltage on the grounding cells of galvanic anodes are as follows :
      E_(Za)=log(5.2475/ρ^(0.0672))+64×1-^(-7)(10L)^(0.5112). ρ^(0.9006), i
      E_(Al)=log(4.8889/ρ^(0.0437))+66×10^(-7)(10L)^(0.5487). ρ^(0.9235), i
      E_(Mg)=log(4.152/ρ^(0.1234))+1514×10^(-7)(10L)^(0.0681). ρ^(06019), i
      5) Impress voltage which have the rapid increase rate of the insulation joint protective device of silicon diode was higher than of the grounding cell of galvanic anodes, but the constant impressed voltage in the case of the former was higher than in the case of the latter.
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      This paper used for designing the grounding cell has reached the following conclusion as the results of an experimental study on the grounding cell characteristics of galvanic anodes for corrosion protection of pipings. The galvanic anode have three k...

      This paper used for designing the grounding cell has reached the following conclusion as the results of an experimental study on the grounding cell characteristics of galvanic anodes for corrosion protection of pipings. The galvanic anode have three kinds such as zinc alloy anode, aluminium alloy anode and magnesium alloy anode, which are widely used on cathodic protection for all metals structures in water or under ground, and Silicon diodes are used on the insulation joint protective device :
      1) in order to drain a certain electric current from a certain impressed voltage, the active area of anode should be increased but the space between anodes should be lessened as possible in the case of the environmental condition of high specific resistance.
      2) Among these three kinds of galvanic anodes, when the specific resistance of the environment was bellow 750Ω. cm, zinc alloy anode was best, and when above 750Ω cm, magnesium alloy anode used for grounding cell characteristics was the best, but aluminium alloy anode in all the environments reduced grounding cell characteristics to the lower grade than those of zinc alloy anode.
      3) The impressed voltage at which drainage current density begins rapidly increasing becomes lowered in all anodes according as the specific resistance of the environment increases.
      4) The approximate relations of drainage current density and impressed voltage on the grounding cells of galvanic anodes are as follows :
      E_(Za)=log(5.2475/ρ^(0.0672))+64×1-^(-7)(10L)^(0.5112). ρ^(0.9006), i
      E_(Al)=log(4.8889/ρ^(0.0437))+66×10^(-7)(10L)^(0.5487). ρ^(0.9235), i
      E_(Mg)=log(4.152/ρ^(0.1234))+1514×10^(-7)(10L)^(0.0681). ρ^(06019), i
      5) Impress voltage which have the rapid increase rate of the insulation joint protective device of silicon diode was higher than of the grounding cell of galvanic anodes, but the constant impressed voltage in the case of the former was higher than in the case of the latter.

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