Two-dimensional numerical device simulations are performed for a 0.7 ㎛-gate Ga_(0 47)Inp_(0 53)As/InP high electron mobility transistor (HEMT) using a two-dimensional drift-diffustion transport model coupled with a thermionic emission model at the h...
Two-dimensional numerical device simulations are performed for a 0.7 ㎛-gate Ga_(0 47)Inp_(0 53)As/InP high electron mobility transistor (HEMT) using a two-dimensional drift-diffustion transport model coupled with a thermionic emission model at the hetero junction interface It is predicted that maximum room temperature transconductance of the Ga_(0 47)Inp_(0 53)As/InP HEMT (436 mS/mm) is approximately 33% higher than that of the GaAs/Al_(0 3)Ga_(0 7)As HEMT (328 mS/mm). This high tranconductance is attributed mainly to the superior electron transport properties of an undoped Ga_(0 47)Inp_(0 53)As/InP layer m the modulation doped heterostructure.