EL2 and shallow level absorption image photoquenching in the band edge region of ELC grown S.I. GaAs = S.I. GaAs Band Edge 부근에서의 EL2와 Shallow Level의 적외선 영상에 대한 photoquenching

다국어 초록 (Multilingual Abstract)

New near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near-bandgap infrared transmission, is both rapid and non-destructive.
Until now, no quantitative analysis has been reported for spectral range which gives the reverse contrast on EL2 absorption images. In the present work we have studied the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band dege domain for cells and walls and for direct and inverted contrast conditions at photoquenching equilibrium and during transitory regimes. This study leads to some consistent finding but also reveals new and unexpected informations on the EL2 photoquenching phenomenon in standard GaAs wafers.

목차 (Table of Contents)

• I. INTRODUCTION
• II. BACKGROUND
• III. EXPERIMENTAL TECHIQUE
• IV. RESULTS
• V. Discussion
• VI. Conclusion