During the process of chemical mechanical polishing, much heat was generated due to friction force between CMP pad and wafer. Wafer and pad surface temperature had a stepped upward trend with the beginning of polishing process. The effects on chemical...
During the process of chemical mechanical polishing, much heat was generated due to friction force between CMP pad and wafer. Wafer and pad surface temperature had a stepped upward trend with the beginning of polishing process. The effects on chemical reaction and mechanical mechanism were investigated separately. BTA was proved to be ineffective in high temperature slurry environment. Other chemical reaction such as corrosion and oxidation also accelerated. But temperature did not influence the slurry particle size. By using high temperature slurry, the polishing temperature conditions at the later stage could be achieved directly, and removal rate also increased correspondingly.