Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

다국어 초록 (Multilingual Abstract)

The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAswafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to thesolution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantationdose of 51015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 C.
The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increasedinteraction energy between the implanted photoresist and the solution that results from theirsimilarities in the dispersive-to-polar component ratios.

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