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      DRAM의 성능 향상을 위한 Pre-Refresh 기법

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      https://www.riss.kr/link?id=A105619761

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      다국어 초록 (Multilingual Abstract)

      Dynamic random access memory (DRAM) latency depends on the row activation time required to detect the charge of a DRAM cell. If a DRAM cell is fully charged, the sense amplifier can rapidly detect charges, thus reduce the row activation time. In this paper, we propose a pre-refresh technique to reduce the row activation time of DRAM. The pre-refresh technique charges DRAM cells in a row that are expected to be accessed while DRAM is idle. If any DRAM cells in the row are read or written soon, the row activation time can be reduced. Experimental results show that, when the pre-refreshed quad-core processor performs PARSEC benchmarks, a memory system with the pre-refresh technique causes 5.49% less power consumption, and achieves 11.8% faster program execution time.
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      Dynamic random access memory (DRAM) latency depends on the row activation time required to detect the charge of a DRAM cell. If a DRAM cell is fully charged, the sense amplifier can rapidly detect charges, thus reduce the row activation time. In this ...

      Dynamic random access memory (DRAM) latency depends on the row activation time required to detect the charge of a DRAM cell. If a DRAM cell is fully charged, the sense amplifier can rapidly detect charges, thus reduce the row activation time. In this paper, we propose a pre-refresh technique to reduce the row activation time of DRAM. The pre-refresh technique charges DRAM cells in a row that are expected to be accessed while DRAM is idle. If any DRAM cells in the row are read or written soon, the row activation time can be reduced. Experimental results show that, when the pre-refreshed quad-core processor performs PARSEC benchmarks, a memory system with the pre-refresh technique causes 5.49% less power consumption, and achieves 11.8% faster program execution time.

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      참고문헌 (Reference)

      1 박태진, "병렬 TLC STT-MRAM 기반 대용량 LLC 설계" 한국정보기술학회 15 (15): 77-89, 2017

      2 Lee, Donghyuk, "Tiered-latency DRAM: A low latency and low cost DRAM architecture" 615-626, 2013

      3 Christian Bienia, "The PARSEC benchmark suite: Characterization and architectural implications" 72-81, 2008

      4 Kalyan, T. Venkata, "Scattered refresh: An alternative refresh mechanism to reduce refresh cycle time" 598-603, 2014

      5 Venkatesan, Ravi K., "Retention-aware placement in DRAM (RAPID): Software methods for quasi-non-volatile DRAM" 157-167, 2006

      6 Liu, Jamie, "RAIDR: Retention-aware intelligent DRAM refresh" 40 (40): 1-12, 2012

      7 Wongyu Shin, "NUAT: A non-uniform access time memory controller" 464-465, 2014

      8 Shen, John Paul, "Modern processor design: fundamentals of superscalar processors" Waveland Press 2013

      9 Jacob, Bruce, "Memory systems: cache, DRAM, disk" Morgan Kaufmann 2010

      10 Patel, Avadh, "Marss-x86: A qemu-based micro-architectural and systems simulator for x86 multicore processors" 2011

      1 박태진, "병렬 TLC STT-MRAM 기반 대용량 LLC 설계" 한국정보기술학회 15 (15): 77-89, 2017

      2 Lee, Donghyuk, "Tiered-latency DRAM: A low latency and low cost DRAM architecture" 615-626, 2013

      3 Christian Bienia, "The PARSEC benchmark suite: Characterization and architectural implications" 72-81, 2008

      4 Kalyan, T. Venkata, "Scattered refresh: An alternative refresh mechanism to reduce refresh cycle time" 598-603, 2014

      5 Venkatesan, Ravi K., "Retention-aware placement in DRAM (RAPID): Software methods for quasi-non-volatile DRAM" 157-167, 2006

      6 Liu, Jamie, "RAIDR: Retention-aware intelligent DRAM refresh" 40 (40): 1-12, 2012

      7 Wongyu Shin, "NUAT: A non-uniform access time memory controller" 464-465, 2014

      8 Shen, John Paul, "Modern processor design: fundamentals of superscalar processors" Waveland Press 2013

      9 Jacob, Bruce, "Memory systems: cache, DRAM, disk" Morgan Kaufmann 2010

      10 Patel, Avadh, "Marss-x86: A qemu-based micro-architectural and systems simulator for x86 multicore processors" 2011

      11 "JEDEC DDR3 standard"

      12 Chen, I-Cheng K., "Instruction prefetching using branch prediction information" 593-603, 1997

      13 Chang, Kevin Kai-Wei, "Improving DRAM performance by parallelizing refreshes with accesses" 356-367, 2014

      14 Ishwar Bhati, "Flexible auto-refresh" Association for Computing Machinery (ACM) 43 (43): 235-246, 2016

      15 Jeffrey Stuecheli, "Elastic refresh: Techniques to mitigate refresh penalties in high density memory" 375-384, 2010

      16 Rosenfeld, Paul, "DRAMSim2: A cycle accurate memory system simulator" 10 (10): 16-19, 2011

      17 Hassan, Hasan, "ChargeCache: Reducing DRAM latency by exploiting row access locality" 581-593, 2016

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2022 평가예정 재인증평가 신청대상 (재인증)
      2019-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2016-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2012-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2008-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2006-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.45 0.45 0.39
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.38 0.35 0.566 0.16
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