Phase Transition Characteristics in GexSblOO-x Film for Optical Storage Media = Phase Transition Characteristics in GexSblOO-x Film for Optical Storage Media

다국어 초록 (Multilingual Abstract)

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of GexSb1oo-x( 6.s. x S. 34) were studied to investigate the feasibility of applying GexSb1oo-x alloys in optical memory. The GexSblOo-x thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction(XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AFM). Optimum film composition of GexSblOo-x was studied and its minimum time for laser induced crystallization and optical contrast for phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that GexSblOo-x have an potential for optical memory applications.