A Novel Inspection Method Using a Low-Energy Electron Beam for the Contact/Via-Holes in Multi-Layer ULSI Devices

다국어 초록 (Multilingual Abstract)

As the aspect ratio of the contact- or via-holes is getting ever higher in today’s semiconductor
devices, it has become more difficult to inspect the inside of the holes during the fabrication
procedure. In this work, we propose a new inspection method for contact/via-holes by using a
low-energy electron beam microcolumn. In this novel method, we can determine the healthiness of
the contact/via-holes without cutting the wafer and observing cross sections of the holes. Furthermore,
we can obtain top-view images of the semiconductor devices by using large-scale scanning
electron microscopy (SEM) equipment. We expect the new method to be very useful for inspection
of multi-layer semiconductor devices.

참고문헌 (Reference)

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