1 C. A. Choi, "Stress characteristics of multilayer polysilicon for the fabrication of micro resonators" 8 (8): 53-62, 1999
2 W. D. Sawyer, "SOI bonded wafer process for high precision MEMS inertial sensors" 15 : 1588-1593, 2005
3 최범규, "SOG(Sillicon On Glass)공정을 이용한 수평형 미소가속도계의 제작에 관한 연구" 한국센서학회 13 (13): 430-435, 2004
4 W. C. Young, "Roark's Formulas for Stress and Strain (7th Edition)" McGraw-Hill 229-, 2002
5 X. Ding, "Residual stress and mechanical properties of boron-doped p+- silicon films" 23 : 866-871, 1990
6 O. Le Traon, "Monolithic differential vibrating beam accelerometer within an isolating system between the two resonators" 648-651, 2005
7 N. Yazdi, "Micromachined inertial sensors" 1640-1659, 1998
8 S. Seok, "Inertial-grade in-plane resonant silicon accelerometer" 42 (42): 1092-1093, 2006
9 N. Barbour, "Inertial sensor technology trends" 1 (1): 332-339, 2001
10 A. A. Seshia, "A vacuum packaged surface micromachined resonant accelerometer" 11 (11): 784-793, 2002
1 C. A. Choi, "Stress characteristics of multilayer polysilicon for the fabrication of micro resonators" 8 (8): 53-62, 1999
2 W. D. Sawyer, "SOI bonded wafer process for high precision MEMS inertial sensors" 15 : 1588-1593, 2005
3 최범규, "SOG(Sillicon On Glass)공정을 이용한 수평형 미소가속도계의 제작에 관한 연구" 한국센서학회 13 (13): 430-435, 2004
4 W. C. Young, "Roark's Formulas for Stress and Strain (7th Edition)" McGraw-Hill 229-, 2002
5 X. Ding, "Residual stress and mechanical properties of boron-doped p+- silicon films" 23 : 866-871, 1990
6 O. Le Traon, "Monolithic differential vibrating beam accelerometer within an isolating system between the two resonators" 648-651, 2005
7 N. Yazdi, "Micromachined inertial sensors" 1640-1659, 1998
8 S. Seok, "Inertial-grade in-plane resonant silicon accelerometer" 42 (42): 1092-1093, 2006
9 N. Barbour, "Inertial sensor technology trends" 1 (1): 332-339, 2001
10 A. A. Seshia, "A vacuum packaged surface micromachined resonant accelerometer" 11 (11): 784-793, 2002
11 S. X. P. Su, "A resonant accelerometer with two-stage microleverage mechanisms fabricated by SOI-MEMS technology" 5 (5): 1214-1223, 2005
12 L. He, "A CMOS readout circuit for SOI resonant accelerometer with 4-μg bias stability and 20-μg/√Hz resolution" 43 : 1480-1490, 2008