조절 가능한 층간교환상호작용에 관한 연구

다국어 초록 (Multilingual Abstract)

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a F₁/NM/F₂/S (F₁: ferromagnetic, NM: nonmagnetic metallic, F₂: ferromagnetic, S: semiconductor layers) four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependence of reflectivity to the F₁/NM/F₂/S four-layer system, where the reflectivities at the interface in NM/F₂ interface also depends on F₂/S interface due to the multiple reflection of an electron-like optics. Finally, the IEC energy depends on the spindependent electron reflectivity not only at the interfaces of F₁/NM/F₂, but also at the interface of F₂/S. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at F₂/S interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due ti the electron-optics nature using a simple free-electron-like one-dimensional model.