Materials and failures in MEMS and NEMS

목차 (Table of Contents)

• CONTENTS
• 1 Carbon as a MEMS Material / Amritha Rammohan ; Ashutosh Sharma = 1
• 1.1 Introduction = 1
• 1.2 Structure and Properties of Glassy Carbon = 3
• 1.3 Fabrication of C-MEMS Structures = 4
• 1.3.1 Mechanism and Features of the Pyrolysis Process = 4
• 1.3.2 Lithographic Processes for the Fabrication of C-MEMS Structures = 6
• 1.3.3 Soft Lithographic Techniques = 11
• 1.3.4 Self-Assembly and Bottom-Up Processes for the Fabrication of C-MEMS Structures = 13
• 1.4 Integration of C-MEMS Structures with Other Materials = 15
• 1.5 Conclusion = 18
• References = 18
• 2 Intelligent Model-Based Fault Diagnosis of MEMS / Afshin Izadian = 21
• 2.1 Introduction = 21
• 2.1.1 MEMS Structure and Origins of Fault = 22
• 2.2 Model-Based Fault Diagnosis = 29
• 2.2.1 Fault and Failure Definitions = 30
• 2.2.2 System Behavior = 30
• 2.2.3 Fault and Model Uncertainty = 31
• 2.2.4 Faulty System Modes and Conditions = 31
• 2.2.5 Fault Diagnosis = 31
• 2.2.6 MEMS Mathematical Model = 33
• 2.2.7 Adaptive Estimation = 39
• 2.2.8 Simulation and Experimental Results = 41
• 2.2.9 Experimental Results and Discussion = 44
• 2.3 Self-Tuning Estimation = 49
• 2.3.1 Estimator Structure = 49
• 2.3.2 Fault Diagnosis Application in MEMS : Simulation and Experiment = 50
• References = 59
• 3 MEMS Heat Exchangers / B. Mathew ; L. Weiss = 63
• 3.1 Introduction = 63
• 3.2 Fundamentals of Thermodynamics, Fluid Mechanics, and Heat Transfer = 67
• 3.2.1 Thermodynamics = 67
• 3.2.2 Fluid Mechanics = 70
• 3.2.3 Heat Transfer = 78
• 3.3 MEMS Heat Sinks = 86
• 3.4 MEMS Heat Pipes = 92
• 3.6 Need for Microscale Internal Flow Passages = 113
• Nomenclature = 115
• Greek Alphabets = 116
• Subscripts = 116
• References = 117
• 4 Application of Porous Silicon in MEMS and Sensors Technology / L. Sujatha ; Chirasree Roy Chaudhuri ; Enakshi Bhattacharya = 121
• 4.1 Introduction = 121
• 4.1.1 Properties of Porous Silicon for MEMS Applications = 122
• 4.1.2 Review of PS for MEMS Applications = 122
• 4.1.3 Formation of PS = 123
• 4.1.4 Classification of PS = 127
• 4.1.5 Effect of Formation Parameters on Porosity and Thickness = 130
• 4.1.6 PS Drying Mechanisms = 130
• 4.1.7 Effect of PS Formation on Stiction in MEMS = 130
• 4.2 Porous Silicon in Biosensors = 131
• 4.2.1 PS Cantilever-Based Resonant Frequency Detection = 131
• 4.2.2 PS-Based Impedance Detection = 138
• 4.2.3 PS-Based EISCAP Structure for Capacitive Detection = 148
• 4.2.4 PS-Based Other Electrochemical Biosensors = 151
• 4.2.5 Reliability = 154
• 4.3 Porous Silicon for Pressure Sensors = 155
• 4.3.1 Pressure Sensor with Silicon／PS Composite Membrane = 156
• 4.3.2 Pressure Sensors with Piezoresistive Effect of PS = 160
• 4.4 Conclusion = 165
• References = 165
• 5 MEMS／NEMS Switches with Silicon to Silicon(Si-to-Si) Contact Interface / Chengkuo Lee ; Bo Woon Soon ; You Qian = 173
• 5.1 Introduction = 173
• 5.1.1 Why Silicon? = 174
• 5.1.2 Electrostatic Switch = 174
• 5.2 Bi-Stable CMOS Front End Silicon Nanofin(SiNF) Switch for Non-volatile Memory Based On Van Der Waals Force = 175
• 5.2.1 Operational SiNF NEMS Switch with Bi-Stable States = 176
• 5.2.2 Van Der Waals Operation and Critical Length = 176
• 5.2.3 Fabrication Process = 178
• 5.2.4 Electrical Characteristics of NEMS Switch Non-volatile Memory = 181
• 5.3 Vertically Actuated U-Shape Nanowire NEMS Switch = 184
• 5.3.1 Dual-Silicon-Nanowires-Based U-Shape NEMS Switch = 184
• 5.3.2 U-Shape Nanowire Fabrication = 185
• 5.3.3 Low-Voltage Operation = 185
• 5.4 A Vacuum Encapsulated Si-to-Si MEMS Switch for Rugged Electronics = 187
• 5.4.1 Three Terminal On-Off with Vacuum Encapsulated Switch = 187
• 5.4.2 Vacuiim Encapsulated Si-to-Si Switch = 191
• 5.4.3 Reliability of a Vacuum Encapsulated Si-to-Si Switch = 193
• 5.5 Summary = 197
• References = 197
• 6 On the Design, Fabrication, and Characterization of cMUT Devices / J. Jayapandian ; K. Prabakar ; C.S. Sundar ; Baldev Raj = 201
• 6.1 Introduction = 201
• 6.2 cMUT Design and Finite Element Modeling Simulation = 203
• 6.3 cMUT Fabrication and Characterization = 205
• 6.3.1 Surface Micromachining Method = 205
• 6.3.2 Wafer Bonding Method = 205
• 6.3.3 Wafer Bonding Method with Isolation Trenches = 211
• 6.4 Summary and Conclusions = 216
• Acknowledgments = 217
• References = 217
• 7 Inverse Problems in the MEMS／NEMS Applications / Yin Zhang = 219
• 7.1 Introduction = 219
• 7.2 Inverse Problems in the Micro／Nanomechanical Resonators = 222
• 7.2.1 Determining the Mass and Position of Adsorbate by Using the Shifts of Resonant Frequencies = 222
• 7.2.2 Determining the Adsorption-Induced Surface Stress and Mass by Measuring the Shifts of Resonant Frequencies = 224
• 7.2.3 Determining the Surface Elasticity and Surface Stress by Measuring the Shifts of Resonant Frequencies = 227
• 7.2.4 Determining the Stiffness and Mass of Biochemical Adsorbates by a Resonator Sensor = 230
• 7.3 Inverse Problems in the MEMS Stiction Test = 231
• Acknowledgment = 234
• References = 234
• 8 Ohmic RF-MEMS Control / M. Spasos ; R. Nilavalan = 239
• 8.1 Introduction = 239
• 8.1.1 Voltage Drive Control Under Single Pulse = 240
• 8.1.2 Voltage Drive Control Under Tailored Pulse = 241
• 8.1.3 Voltage Drive Control Under Optimized-Tailored Pulse = 245
• 8.2 Charge Drive Control(Resistive Damping) = 251
• 8.3 Hybrid Drive Control = 255
• 8.4 Control Under High-Pressure Gas Damping = 258
• 8.5 Comparison between Different Control Modes = 258
• References = 260
• 9 Dynamics of MEMS Devices / Vamsy Godthi ; K. Jayaprakash Reddy ; Rudra Pratap = 263
• 9.1 Introduction = 263
• 9.1.1 Resonant Devices = 264
• 9.1.2 Non-resonant Devices = 265
• 9.2 Modeling and Simulation = 266
• 9.2.1 Design Parameters = 266
• 9.2.2 Multi-physics = 268
• 9.2.3 Simulation Tools = 270
• 9.2.4 Process Flow Simulation = 272
• 9.3 Fabrication Methods = 273
• 9.3.1 Surface Micromachining = 273
• 9.3.2 Bonding = 275
• 9.4 Characterization = 276
• 9.4.1 Visual = 277
• 9.4.2 Electrical = 277
• 9.4.3 Mechanical = 279
• 9.5 Device Failures = 280
• 9.5.1 Frequency Shifts = 280
• 9.5.2 Wrong Modes = 281
• 9.5.3 Structural Integrity = 282
• 9.5.4 Reliability Failure = 282
• Acknowledgments = 283
• References = 283
• 10 Buckling Behaviors and Interfacial Toughness of a Micron-Scale Composite Structure with a Metal Wire on a Flexible Substrate / Qinghua Wang ; Huimin Xie ; Yanjie Li = 285
• 10.1 Introduction = 285
• 10.2 Buckling Behaviors of Constantan Wire under Electrical Loading = 289
• 10.2.1 Sample and Experiments = 290
• 10.2.2 Buckling Morphologies and Characteristics of Constantan Wire = 294
• 10.2.3 Buckling Mechanism Analysis of Constantan Wire = 299
• 10.2.4 Critical Buckling Analysis of Constantan Wire = 300
• 10.2.5 Post-Buckling Analysis of Constantan Wire = 301
• 10.3 Interfacial Toughness between Constantan Wire and Polymer Substrate = 305
• 10.3.1 Interfacial Toughness Formula for Rigid Film and Flexible Substrate = 305
• 10.3.2 Interfacial Toughness Measurement and Discussions = 306
• 10.3.3 Applicable Condition of the Electricity-Induced Buckling Method = 309
• 10.4 Buckling Behaviors of Polymer Substrate Restricted by Constantan Wire = 310
• 10.4.1 Sample and Experiments = 310
• 10.4.2 Micron-Scale Buckling Mode of the Polymer Substrate = 312
• 10.4.3 Micron and Submicron Cross-Scale Buckling Modes = 317
• 10.4.4 The Buckling Mechanism Analysis of the Polymer Substrate = 319
• 10.5 Conclusions = 321
• Acknowledgments = 322
• References = 322
• 11 Microcantilever-Based Nano-Electro-Mechanical Sensor Systems : Characterization, Instrumentation, and Applications / Sheetal Patil ; V. Ramgopal Rao = 325
• 11.1 Introduction = 325
• 11.1.1 General Definitions and Concepts = 325
• 11.2 Operation Principle and Fundamental Models = 327
• 11.3 Microcantilever Sensor Fabrication = 330
• 11.3.1 Si Microcantilevers = 331
• 11.3.2 Bulk Micromachining = 331
• 11.3.3 Polymer Microcantilevers = 333
• 11.3.4 Surface Micromachining = 333
• 11.3.5 Microcantilevers with Integrated Functionality = 334
• 11.4 Mechanical and Electrical Characterization of Microcantilevers = 335
• 11.4.1 Nano-Indentation Techniques = 335
• 11.4.2 Surface and Resonant Frequency Measurements = 337
• 11.4.3 Electrical Characterization = 338
• 11.4.4 Noise and Reliability Characterizations = 338
• 11.5 Readout Principles = 339
• 11.5.1 Integrated Optical Readout = 340
• 11.5.2 Piezo-Resistive Readout = 341
• 11.5.3 Piezoelectric Readout = 343
• 11.5.4 Capacitance Readout = 344
• 11.6 Application of Microcantilever Sensors = 344
• 11.6.1 Vapor Phase／Gas／Chemical Detection = 344
• 11.6.2 Biosensors = 346
• 11.6.3 Agriculture Applications = 347
• 11.7 Energy Harvesting for Sensor Networks = 349
• 11.7.1 Low-Frequency Vibration Energy Harvesting = 349
• 11.7.2 Microwave Energy Harvesting = 351
• 11.7.3 Photo-Voltaic and Thermal Energy Harvesting = 351
• 11.8 Conclusion = 351
• References = 352
• 12 CMOS MEMS Integration / Thejas ; Navakanta Bhat = 361
• 12.1 Introduction = 361
• 12.2 State-of-the-Art inertial Sensor = 362
• 12.2.1 Hybrid Integration-Based Sensors = 364
• 12.2.2 Monolithic Integration-Based Sensors and Actuators = 366
• 12.3 Capacitance Sensing Techniques = 366
• 12.4 Capacitance Sensing Architectures = 367
• 12.5 Continuous Time Voltage Sensing Circuit = 368
• 12.6 CMOS ASIC Design = 371
• 12.7 Test Results of CMOS-MEMS Integration = 377
• 12.8 Electrical Reliability Issues = 378
• References = 380
• 13 Solving Quality and Reliability Optimization Problems for MEMS with Degradation Data / Yash Lundia ; Kunal Jain ; Mamanduru Vamsee Krishna ; Manoj Kumar Tiwari ; Baldev Raj = 381
• Abbreviations = 381
• 13.1 Introduction = 382
• 13.2 Notations and Assumptions = 384
• 13.2.1 Notations = 384
• 13.2.2 Assumptions = 385
• 13.3 Reliability Model = 385
• 13.3.1 Wear Degradation due to Burn-In Procedure = 386
• 13.3.2 Non-destructive Evaluation = 387
• 13.3.3 Replacement and Failure Cost = 388
• 13.3.4 Optimization Model = 393
• 13.3.5 Solution Methodology - Algorithm Description = 394
• 13.4 Numerical Example = 395
• 13.5 Conclusions = 397
• References = 397