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Nanoelectronic materials and devices : select proceedings of ICNETS2 . Volume III

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https://www.riss.kr/link?id=M15357865

저자

Labbé, Christophe
발행사항
Singapore : Springer, [2018]
발행연도
2018
작성언어
영어
주제어

Nanoelectronics ; Nanostructured materials ; Nanoelectromechanical systems ; Electrical engineering
DDC
621.3 판사항(23)
ISBN
9789811071904
981107190X
자료형태
단행본(다권본)
발행국(도시)
싱가포르
서명/저자사항
Nanoelectronic materials and devices : select proceedings of ICNETS2. Volume III / Christophe Labbé ... [et al.] editors.
형태사항
xii, 246 p. : ill. ; 25 cm.
총서사항
Lecture Notes in Electrical Engineering ; v. 466 Lecture notes in electrical engineering ; v. 466.
일반주기명
Includes bibliographical references and index.
Description based upon print version of record.
The Effect of Functionalized MWCNT on Mechanical and Electrical Properties of PMMA Nanocomposites -- Performance Analysis of Dual-Metal Double-Gate Tunnel-Fets for Ultralow Power Applications -- Films of Reduced Graphene Oxide based Metal Oxide Nanoparticles -- Size optimization of InAs/GaAs quantum dots for longer storage memory applications -- Design and Analysis of a CMOS 180 nm Fractional N Frequency Synthesizer -- Memristor based Approximate Adders for Error Resilient Applications -- Integrated Mems Capacitive Pressure Sensor with On-Chip CDC for a wide Operating Temperature Range -- A High SNDR and Wider Signal Bandwidth CT ∑∆ Modulator with a Single Loop Non-linear Feedback Compensation -- Design of Current Mode CNTFET Transceiver for Bundled Carbon Nanotube Interconnect -- Weak Cell Detection Techniques for Memristor Based Memories -- Enhancement of Transconductance using Multi-recycle Folded Cascode Amplifier -- Nondestructive Read Circuit for Memristor based Memories -- A Built in Self Repair Architecture for Random Access Memories -- A Current Mode DC-DC Boost Converter with Fast Transient and on-chip Current Sensing Technique -- A Modified GDI Based Low Power & High Read Stability 8T SRAM Memory with CNTFET Technology -- High Performance Trench Gate Power MOSFET of Indium Phosphide -- Memristor Equipped Error Detection Technique -- 28nm FD-SOI SRAM Design using Read Stable Bit Cell Architecture -- Design and Verification of Memory Controller with Host WISHBONE Interface -- 8-Bit Asynchronous Wave-Pipelined Arithmetic-Logic Unit.
회의명
International Conference on NextGen Electronic Technologies
소장기관
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