비냉각 적외선 감지기용 비나듐 산화막의 전기전도기구 = Conduction Mechanism of Vanadium Oxide Thin Films for Uncooled IR Detector Application

다국어 초록 (Multilingual Abstract)

Thin films of vanadium oxide(VO_(x)) have been deposited by r.f. magnetron sputtering from V_(2)O_(5) target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and electrical properties of films sputter-deposited under different oxygen gas pressures have been characterized through XRD, AES, RBS and electrical conductivity measurements. All the films prepared below 8% O_(2) are amorphous, and those prepared without oxygen are gray indicating the presence of V_(2)O_(4) phase in the films. In order to measure the current-voltage characteristics and temperature dependence of conductance, devices of A1/VO_(x)/A1 sandwich structure have been fabricated. I-V characteristics are distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high field it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.