Copper oxide thin films were deposited on oxidized Si substrates by the pyrosol process using the mixed solution of copper nitrate and acetylacetone in butanol and water mixture. The resulting films were characterized by x-ray diffraction(XRD), x-ray ...
Copper oxide thin films were deposited on oxidized Si substrates by the pyrosol process using the mixed solution of copper nitrate and acetylacetone in butanol and water mixture. The resulting films were characterized by x-ray diffraction(XRD), x-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM). The deposition mechanism was studied by the dependences of deposition rate on the deposition conditions. The resulting films are crystallized at relatively low temperature of 250˚C and over and possess homogeneous and uniform microstructure. The XRD and XPS analyses show that the phase of the films are dependent on the oxygen partial pressure in the reactor. The apparent activation energy of deposition is 3.0 Kcal/mol at the surface control region. The deposition mechanism of CuO thin film is the Elley-Rideal mechanism that is operating with Cu-acetylacetonate as a chemisorbed species and oxygen reacting on the surface from the gas phase.