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    RISS 인기검색어

      Characteristics of Stimulated Emission from Optically Pumped Freestanging GaN Grown by Hydride Vapor-Phase Epitaxy

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      https://www.riss.kr/link?id=A30065903

      • 저자

        LEE, M. H. (Department of Materials Engneering & Institute of Semiconductor Technology, Taejon National University of Technology) ;  PARK, K. Y. (Department of Materials Engneering & Institute of Semiconductor Technology, Taejon National University of Technology) ;  KIM, S. T. (Department of Materials Engneering & Institute of Semiconductor Technology, Taejon National University of Technology) ;  CHUNG, S. H (Dpartment of Electronic Materials Engineering, Kwangwoon University) ;  MOON, D. C (Dpartment of Electronic Materials Engineering, Kwangwoon University)

      • 발행기관
      • 학술지명
      • 권호사항
      • 발행연도

        2000

      • 작성언어

        English

      • KDC

        569.4

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        학술저널

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        22-25(4쪽)

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      In this study, we observed optically pumped stimulated emission at room temperature in quasibulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire substrate. The stimulated emission from the surface and l-mm-wide-cleaved cavity of the GaN was red-shifted compared to the spontaneous emission by increasing the optical pumping-power density, and the full width at half maximum (FWHM) of the peak decreased. The stimulated emission was demonstrated to have a highly TE-mode polarized nature, and the super-linear dependence of the integrated emission intensity on the excitation power indicated a threshold pump-power of I_th=2MW/㎠ for one set of stimulated emissions.
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      In this study, we observed optically pumped stimulated emission at room temperature in quasibulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire subs...

      In this study, we observed optically pumped stimulated emission at room temperature in quasibulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire substrate. The stimulated emission from the surface and l-mm-wide-cleaved cavity of the GaN was red-shifted compared to the spontaneous emission by increasing the optical pumping-power density, and the full width at half maximum (FWHM) of the peak decreased. The stimulated emission was demonstrated to have a highly TE-mode polarized nature, and the super-linear dependence of the integrated emission intensity on the excitation power indicated a threshold pump-power of I_th=2MW/㎠ for one set of stimulated emissions.

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